data sheet semiconductor http://www.yeashin.com 1 rev.02 20120305 kbpc8005 thru kbpc810 technical sp eci f ications of single-phase silicon bridge rectifier voltage range-5 0 to1000 volts current-8.0 amperes fea t ures ?e surge ov erload r a ting : 12 5 ampe res pea k ?e l o w forw ard v o lt age drop ?e high tempera t ure sol dering : 260 o c / 10 se cond s at te r m inals ?e pb free produ ct a t av ailable : 99% s n abov e meet rohs env ironment su bst a nce dire ctiv e reque st m e c h an i c al d a t a ?e c a se : m o lde d pl asti c ?e epoxy : ul 94 v - 0 rate flame ret a rdan t ?e l ead: mil-std-2 02, me thod 208 gu aranteed ?e polari ty : sy mbols molded or mar k ed on body ?e m o u n ting po si tio n : a n y ?e w e i ght: 6.9 gram s m a xim u m r a ti ng s a n d electric a l ch a r a c teristi c s ?e ra ting s a t 25c ambient temper atur e unle s s o t herw i se spe c ifie d ?e single pha se, hal f w a v e , 60hz, re si stiv e or inductiv e loa d . ?e for capa citiv e lo ad dera t e cu rren t b y 20% s y m b ols kbpc 8005 kbpc 801 kbpc 802 kbpc 804 kbpc 806 kbpc 808 kbpc 810 uni t m a x i mum repetit i v e peak rev e rse voltage v r r m 5 0 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1000 volts max i mum r m s vo ltage v r m s 3 5 7 0 1 4 0 2 8 0 4 2 0 5 6 0 7 0 0 volts m a x i mum dc blo cking voltage v d c 5 0 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1000 volts m a x i mum a verage for w a rd rect if ie d output cur r e nt a t tc = 50 j i o 8 . 0 amps peak for w a rd surge current 8. 3ms s i ngl e ha l f si ne - w a v e superimposed on r a ted l o ad (j edec method ) i f s m 1 2 5 amps m a x i mum for w a rd voltage drop pe r e l ement at 4.0 a dc v f 1 . 1 volts @t a = 25 j 5.0 m a xi mum dc rever s e cur r e nt at rate dc blocking vo lta g e per ele m ent @tc =100 j ir 500 g amps i 2 t rati ng fo r fusing(t<8. 3ms) i 2 t 1 6 6 a2sec t y pi cal juncti on capaci tance (note 1 ) c j 2 0 0 p f t y pical therma l r esistance (note2) r c j c 2 1 j /w oper ati ng temp erature range t j - 5 5 to +150 j stor age tempe r atur e range t s t g - 5 5 to +150 j notes: 1 . mea s ure d at 1 mhz and app lied rev e rse v o ltage of 4 . 0 v o lts 2 . thermal resi stance from junc tion to ambien t and from ju nction to lead m ounted o n p.c.b . w i th 0.5x 0.5 ?(13x 13mm)copper pads. br-10 unit:inch(mm) 0 30 6 4
http://www.yeashin.com 2 rev.02 20120305 kbpc8005 thru kbpc810 device characteristics
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